Infineon IPB64N25S3-20: A 200V N-Channel Power MOSFET for High-Efficiency Applications
In the realm of power electronics, the quest for higher efficiency, greater power density, and improved thermal performance is relentless. At the heart of many modern solutions—from switch-mode power supplies (SMPS) and motor drives to DC-DC converters and industrial inverters—lies the power MOSFET. The Infineon IPB64N25S3-20 stands out as a robust 200V N-Channel MOSFET engineered specifically to meet these demanding requirements.
This device is built upon Infineon's advanced OptiMOS 3 power technology platform, a hallmark of performance in the industry. The core strength of this technology is its exceptional balance between low on-state resistance and low gate charge. With a maximum RDS(on) of just 19 mΩ at 10 V, the IPB64N25S3-20 minimizes conduction losses, allowing more power to be delivered to the load with less energy wasted as heat. This characteristic is paramount for achieving high efficiency, especially in high-current applications.
Furthermore, the low gate charge (Qg typical of 54 nC) ensures swift switching transitions. Fast switching capability is a critical factor in increasing the operating frequency of power supplies, which in turn allows for the use of smaller passive components like inductors and capacitors. This directly contributes to a reduction in the overall system size and cost, enabling more compact and powerful designs.
The 200V drain-source voltage rating provides a comfortable safety margin for applications operating with bus voltages up to 100V-150V, such as 48V industrial systems, telecom power supplies, and automotive applications. This robust voltage capability ensures reliable operation and enhances the system's resilience against voltage spikes and transients.
Thermal management is another area where this MOSFET excels. Housed in the TO-263 (D2PAK) surface-mount package, it offers an excellent power-to-footprint ratio. The package is designed for efficient heat dissipation, crucial for maintaining performance and reliability under continuous high-stress conditions. Designers can push the limits of their applications, confident that the device can handle the associated thermal challenges.
In summary, the Infineon IPB64N25S3-20 is a superior choice for designers aiming to push the boundaries of efficiency and power density. Its optimal blend of low RDS(on), fast switching speed, and high voltage rating makes it an indispensable component in the arsenal of power electronics engineers.
ICGOODFIND: The Infineon IPB64N25S3-20 is a high-performance 200V MOSFET that delivers exceptional efficiency and reliability for demanding power conversion tasks, making it a top-tier component for modern electronic design.
Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS 3, Fast Switching
