Infineon IPB320N20N3G 200V 20mΩ OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon IPB320N20N3G, a 200V OptiMOS™ 5 Power MOSFET, stands out as a superior solution for high-performance power conversion applications. With an impressively low on-state resistance (RDS(on)) of just 20mΩ, this device significantly reduces conduction losses, making it ideal for high-current switching scenarios.

Engineered with Infineon’s advanced OptiMOS™ 5 technology, the IPB320N20N3G offers exceptional thermal performance and switching efficiency. The reduced gate charge (Qg) and lower output capacitance (Coss) contribute to minimized switching losses, enabling higher frequency operation without compromising thermal management. This is particularly beneficial in applications such as synchronous rectification, DC-DC converters, and motor control systems, where efficiency and reliability are critical.

The MOSFET’s enhanced ruggedness and avalanche robustness ensure reliable operation under extreme conditions, providing an additional layer of system durability. Its compact D2PAK-7 (TO-263-7) package offers improved thermal dissipation and power handling capabilities, supporting designs that require high power density.

In summary, the Infineon IPB320N20N3G leverages cutting-edge OptiMOS™ 5 technology to deliver maximized efficiency and power density in a wide range of industrial and automotive applications.

ICGOOODFIND

The Infineon IPB320N20N3G sets a new benchmark for high-efficiency power conversion with its ultra-low RDS(on), excellent switching characteristics, and robust thermal performance.

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Keywords:

OptiMOS 5 Technology

Low RDS(on)

High-Efficiency Power Conversion

Synchronous Rectification

Thermal Performance