Infineon BSZ340N08NS3G: 30V N-Channel MOSFET for High-Efficiency Power Conversion

Release date:2025-11-05 Number of clicks:127

Infineon BSZ340N08NS3G: 30V N-Channel MOSFET for High-Efficiency Power Conversion

In the realm of modern power electronics, the pursuit of higher efficiency, greater power density, and improved thermal performance is relentless. At the heart of many advanced power conversion systems—from server SMPS and telecom bricks to motor drives and battery management—lies a critical component: the power MOSFET. The Infineon BSZ340N08NS3G stands out as a premier 30V N-Channel MOSFET engineered specifically to meet these demanding challenges.

This MOSFET is built upon Infineon's advanced OptiMOS™ 5 technology, a platform renowned for its exceptional balance of low on-state resistance and high switching performance. The BSZ340N08NS3G boasts an impressively low maximum RDS(on) of just 0.34 mΩ at 10 V. This ultra-low resistance is a key contributor to high efficiency, as it directly minimizes conduction losses, leading to less energy wasted as heat and enabling cooler operation of the end system.

Furthermore, the device features low gate charge (Qg) and outstanding switching characteristics. These attributes are crucial for high-frequency switching applications, as they reduce switching losses and allow designers to increase the switching frequency. A higher frequency, in turn, permits the use of smaller passive components like inductors and capacitors, which is essential for achieving higher power density and more compact system designs.

Housed in a SuperSO8 package, the BSZ340N08NS3G offers a superior footprint-to-performance ratio. This package not only provides excellent thermal conductivity for effective heat dissipation but also allows for a reduced PCB footprint compared to standard SO-8 packages. Its high maximum current rating of 340 A (pulsed) underscores its capability to handle significant power surges, making it exceptionally robust for a wide array of applications.

ICGOOODFIND: The Infineon BSZ340N08NS3G is a top-tier 30V MOSFET that exemplifies the innovation in power semiconductor technology. Its combination of ultra-low RDS(on), superior switching performance, and compact packaging makes it an ideal solution for designers aiming to maximize efficiency and power density in next-generation DC-DC conversion, synchronous rectification, and motor control systems.

Keywords: OptiMOS™ 5, Low RDS(on), High-Efficiency, Power Conversion, SuperSO8 Package.

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