Infineon BFP183WH6327 Low-Noise Enhancement-Mode Pseudomorphic HEMT Datasheet and Application Overview

The Infineon BGP183WH6327 is a state-of-the-art low-noise enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) designed for high-frequency, low-noise amplifier (LNA) applications. Representing a significant advancement in semiconductor technology, this transistor is engineered to provide exceptional performance in the lower microwave frequency range, making it an ideal choice for modern communication systems, including cellular infrastructure, satellite receivers, and wireless data links.

A key feature of the BFP183WH6327 is its enhancement-mode (E-mode) operation. Unlike depletion-mode HEMTs, which require a negative gate voltage to turn off, this E-mode device is normally off and operates with positive gate bias. This characteristic simplifies circuit design by enabling single-supply operation, eliminating the need for a negative voltage generator, thereby reducing system complexity and cost.

The transistor excels in its primary function as a low-noise component. It boasts an extremely low noise figure (NF), typically around 0.6 dB at 2 GHz, which is crucial for maximizing the sensitivity of receiver front-ends. This low noise is complemented by high associated gain, ensuring that weak incoming signals are amplified significantly before further processing, without being degraded by the amplifier's own noise.

Furthermore, the BFP183WH6327 offers excellent linearity and intermodulation performance, which is vital for maintaining signal integrity in densely populated spectral environments. Its robust design is housed in a lead-free SOT-343 (SC-70) surface-mount package, which is optimized for high-frequency performance and facilitates compact PCB layout in space-constrained applications.

From an application perspective, this pHEMT is predominantly used in the first stage of receiver LNA chains where its low noise is most critical. Designers must pay careful attention to biasing and matching networks to extract optimal performance. The datasheet provides detailed S-parameters and noise parameters, which are essential for simulating and designing matching circuits that ensure stability and maximize power transfer across the target frequency band.

ICGOOODFIND: The Infineon BFP183WH6327 is a superior E-mode pHEMT that delivers an exceptional combination of very low noise, high gain, and simplified single-supply operation, making it a cornerstone component for advanced high-frequency receiver designs.

Keywords: Low-Noise Amplifier (LNA), Enhancement-Mode, pHEMT, Noise Figure, S-Parameters.